|
Product Line-up
includes
| - High power IR
LED |
1550,1450,1300,1200,975,940,910,890,870,850,810,760,750,735,
700,680nm |
| - High power and
high speed NIR LED
|
|
870nm, 850nm
|
| - Ultra-bright visible LED lamps |
|
660nm,
620nm, 590nm, 565nm
|
| - Various types
and packages of LED
|
|
Ø 3mm, 5mm LED with ceramic and metal stems
|
Ø 3mm, 5mm, 5.2mm, 5.6mm and 10mm
LED
of mold type
on lead frame |
|
metal can |
|
flat lens for fibre optics - 05 type LED |
|
PD self-monitoring |
| - Chip On Board (COB) custom modules |
| LED modules and arrays |
| LED modules with PD self-monitoring |
| -
Photodiodes: molds, modules and arrays |
| -
Phototransistors: molds, modules and arrays |
Infrared
and Near-Infrared LED
Below is a selection of standard
products. If you cannot find a device satisfying your needs
please send your inquiry because custom specifications can also
be produced
MOLD Type
STEM Type
Overview of standard STEM type
IR LEDs in the range of 680-970nm in various
types of packaging is available here
Visible LED
Below is a list of standard
products. If you cannot find a device satisfying your needs
please send your inquiry because custom specifications can also
be produced
Surface
Mount Device (SMD)
SM package is available for
the whole range of wavelengths: 430-1450 nm. Selected device data
are given below
| SMP430 (plastic
with reflector) |
Blue |
|
| SMP565 (plastic
with reflector) |
Green |
|
| SMP660 (plastic
with
reflector) |
Red |
|
| SMP850N
(plastic with reflector) |
Infrared |
|
| SMC850N (ceramic) |
Infrared |
|
| SMC870N (ceramic) |
Infrared |
|
| SMC890
(ceramic) |
Infrared |
|
| SMP940
(plastic with reflector) |
Infrared |
|
Surface
Mount Device (SMD) in plastic package
New type of SMD in plastic
package was started semi-production instead of ceramic package.
This technology can be applied to any LED die, PD die and PTr
die
| - reducing production cost of
renewal assembling in plastic package |
| - high reliability |
| - applicable to every
semiconductor chip |
Current
Confined Device (CCD)
CCD chip process was renewed
successfully last year. This has brought Epitex many merits
of improving quality, reducing production cost and application
to every LED emitting wavelength of more than 660nm to
Near IR range
| - high resolution
photointerruptor |
| - fiber optics |
| - various kind of physical
measurements |
An illustrative example is
given below
LN850-CET52
Center
emitted LED with ball lens
Multi-wavelength
LEDs
Bi-color LEDs
| Two LED dies
are mounted on lead frame and covered with clear epoxy
resin |
| 5mm, and
5.6mm dia. LEDs of mold type |
| |
|
| L430/565-04 |
|
| L635/760-04 |
|
| L565/660-06 |
|
Multi-color LED
Any LED die can be mounted
on TO-18 (5 pins) or TO-5 (8 pins) covered with clear epoxy
resin or hermetically sealed with flat can or lens can
| L430/565/630/760
Q |
4-wavelength
LED |
| L430/565/660/735
Q |
4-wavelength |
| L565/635/760-PD006-3CB00 |
3-wavelength,
PCB, PD monitored |
| L569/660/805/940/975-35Q96 |
5-wavelength,
TO-5 stem, flat glass can |
| L660/805/975
D |
3-wavelength, TO-18 stem, epoxy lens |
| L660/805/1200/1300-35B32 |
4-wavelength,
TO-18 stem, glass lens |
| L735/810/850/910
Q |
4-wavelength |
20-element LED
array
-
AR880-20 IRED chip
specification
-
LED structure: N-AlGaAs Epi on P-GaAs Epi on P-type GaAs
substrate (anode common type)
-
Peak emission wavelength: 880nm (typ.) at 100 mA
-
Output power: 2.0mW(typ.) at 20mA
-
Dice cut in the orientation as shown in Outline
drawing
Bare
chips
Bare LED chip in a number of
wavelengths in the 680-1550nm range can be offered. Die
shall be mounted on TO-18 gold header without resin coated.
| Type |
Material |
Chip
Size |
Top
Side |
Peak
Wavelength(nm) |
Total
radiated power(mW) |
| C660-30V |
GaAlAs/GaAlAs |
300μｍ□ |
P(Anode) |
660 |
2.5 |
| C680-40P |
GaAlAs/GaAlAs |
400μｍ□ |
N(Cathode) |
680 |
2.0 |
| C735-40P |
GaAlAs/GaAlAs |
400μｍ□ |
N(Cathode) |
735 |
3.5 |
| C770-40P |
GaAlAs/GaAlAs |
400μｍ□ |
N(Cathode) |
770 |
3.5 |
| C810-40P |
GaAlAs/GaAlAs |
400μｍ□ |
N(Cathode) |
810 |
4.0 |
| CN850-40P |
GaAlAs/GaAlAs |
400μｍ□ |
P(Anode) |
850 |
5.0 |
| CN870-40P |
GaAlAs/GaAlAs |
400μｍ□ |
P(Anode) |
870 |
5.0 |
| C940-40P |
GaAlAs/GaAs |
400μｍ□ |
P(Anode) |
940 |
3.5 |
| C1200-35 |
InGaAsP/InP |
350μｍ□ |
P(Anode) |
1200 |
0.1 |
| C1300-35 |
InGaAsP/InP |
350μｍ□ |
P(Anode) |
1300 |
0.1 |
| C1450-35 |
InGaAsP/InP |
350μｍ□ |
P(Anode) |
1450 |
0.1 |
| C1550-35 |
InGaAsP/InP |
350μｍ□ |
P(Anode) |
1550 |
0.1 |
Photodiodes
MOLD type PIN
Photodiode is mounted on lead frame and covered with clear epoxy
resin
STEM type PIN
Photodiode is mounted on stem and covered with clear epoxy resin
or hermetically sealed with lens can:
| PD032P |
|
| PD015F |
|
| PD1300-35xxx |
900-1600nm
response range peaking at 1300nm |
| PD1900-35xxx |
1000-2100nm
response range peaking at 1900nm |
|
|
SMD type in plastic
package
PD010-SMP
Phototransistors
|
