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L760-xxAU      Infrared LED Lamp
  
This series of L760-xxAU is a GaAlAs LED mounted on a lead frame and encapsulated in various types of epoxy lens which offer different design settings. On forward bias it emits a high power radiation of typical 18mW with a peak wavelength of 760nm.
 
Product Specification
 
Chip Material GaAlAs (DDH)
Peak Wavelength 760nm typ.
Package Clear epoxy resin
Lead Frame Soldered
 
Maximum Specification
 
Item Max   Ambient Temp.
Power dissipation, PD   200 mW Ta=25°C
Forward current , I 100 mA Ta=25°C
Pulse Forward current IFP  500 mA Ta=25°C
Reverse voltage, V 5 V Ta=25°C
Operation temp., Topr  -30/+85 °C
Storage temp. , Tstg   -30/+100 °C
Solder temp., Tsol   260 °C
 
Electro-Optical Characteristics  
 
Item Condition Min Standard Max
Forward voltage, VF IF =50mA 1.85 V  2.0 V
Reverse current , IR VR =5V   10 µA  
Total radiated power, PO IF =50mA 13 mW   18 mW  
Peak wavelength, lp IF =50mA 740 nm  760 nm  780 nm 
Half-Width, l ½   IF =50mA 30 nm
Rise-time tR IF =50mA 80 nsec
Fall-time tF IF =50mA 80 nsec
 
Radiant Intensity Characteristics
 
Part no. Viewing Half Angle Radiance  (IF=50mA)   Dimension 
L760-01AU   ±10°   90 mW/sr Ø5 mm Fig. no.1
L760-03AU ±15°   70 mW/sr Ø5 mm Fig. no.2
L760-04AU   ±20°   35 mW/sr  Ø5 mm Fig. no.3
L760-05AU   ±40°   10 mW/sr  Ø5 mm Fig. no.3
L760-06AU ±6° 110 mW/sr Ø5 mm Fig. no.4
L760-33AU   ±15°   40 mW/sr  Ø3 mm Fig. no.7
L760-36AU ±30°     20 mW/sr Ø3 mm Fig. no.8
 
  
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