L760-xxAU      Infrared LED Lamp
This series of L760-xxAU is a GaAlAs LED mounted on a lead frame and encapsulated in various types of epoxy lens which offer different design settings. On forward bias it emits a high power radiation of typical 18mW with a peak wavelength of 760nm.
Product Specification
Chip Material GaAlAs (DDH)
Peak Wavelength 760nm typ.
Package Clear epoxy resin
Lead Frame Soldered
Maximum Specification
Item Max   Ambient Temp.
Power dissipation, PD   200 mW Ta=25C
Forward current , I 100 mA Ta=25C
Pulse Forward current IFP  500 mA Ta=25C
Reverse voltage, V 5 V Ta=25C
Operation temp., Topr  -30/+85 C
Storage temp. , Tstg   -30/+100 C
Solder temp., Tsol   260 C
Electro-Optical Characteristics  
Item Condition Min Standard Max
Forward voltage, VF IF =50mA 1.85 V  2.0 V
Reverse current , IR VR =5V   10 A  
Total radiated power, PO IF =50mA 13 mW   18 mW  
Peak wavelength, lp IF =50mA 740 nm  760 nm  780 nm 
Half-Width, l   IF =50mA 30 nm
Rise-time tR IF =50mA 80 nsec
Fall-time tF IF =50mA 80 nsec
Radiant Intensity Characteristics
Part no. Viewing Half Angle Radiance  (IF=50mA)   Dimension 
L760-01AU   10   90 mW/sr 5 mm Fig. no.1
L760-03AU 15   70 mW/sr 5 mm Fig. no.2
L760-04AU   20   35 mW/sr  5 mm Fig. no.3
L760-05AU   40   10 mW/sr  5 mm Fig. no.3
L760-06AU 6 110 mW/sr 5 mm Fig. no.4
L760-33AU   15   40 mW/sr  3 mm Fig. no.7
L760-36AU 30     20 mW/sr 3 mm Fig. no.8
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