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Epitex Inc is a leading Japanese producer of Visible and
Infrared LEDs, optical sensors and other optoelectronic devices
Standard and custom made products
Competitive prices
Quick delivery
World-wide service
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Activities
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Research,
development and production of Opto-sensor and Custom LED
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Sales
worldwide of semiconductor material and LED
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Sales
of semiconductor manufacturing equipment (III/V and II/VI)
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History
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| 1989
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Research
& development of LEDs was started at Hirakta-city,
Osaka |
| 1990 |
SiC
Blue LED was successful in research and development |
| 1991
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High
power IR LED commenced production |
| 1992
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Visible sensor
of GaAlAs current-confined type was developed |
| 1993
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Full
colour (RGB) dot-matrix display commenced production |
| 1993 |
1.3µm InP-LED commenced mass production |
| 1993 |
Ultra-bright
Red LED started mass production |
| 1994 |
Sensor-use
LED lamp started production on an automatic assembly line |
| 1994 |
1.3µm
InGaAs Photodiode was successful in development |
| 1997
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High
speed and High power IR LED was developed |
| 1998
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Bicolour LED
started production |
| 1998 |
Chip LED of SMD
type started production |
| 1999 |
Multi-wavelength
LED including 975nm for medical use started production |
| 1999 |
Top flat type
of mold LED started production |
| 1999 |
CCD chip
process was renewed successfully |
| 2000 |
New type of SMD
in plastic package started production |
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Technology
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State-of-the art LPE mass-production
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- Original
design
equipment
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High
R&D capability in opto-sensors and custom LED
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- Development
and innovation
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Additional R&D facility and equipment for
optoelectronic devices
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A
leader in both production and R&D
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Over 30 years experience of related technology in III-V
semiconductors
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Originality
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Original design
equipment
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- High quality GaAlAs (DDH) epitaxial growth
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Sophisticated chip process
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First to achieve mass production capability in GaAlAs
(DDH) chip
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Improved
radiant intensity of GaAlAs (DDH) LED lamp with revolutionary
new technology
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Intensity is improved by precision assembly technology
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Competitiveness
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Advanced mass production
reduces
production cost
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- Multi-wafer epitaxy capability for GaAlAs
(DDH)
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Experienced
engineering for best customer support
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- Ability
to 'work with customer' for product innovation and new
applications
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Geared
for expansion to meet rising demand
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Technical
collaboration with leading edge customers
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Facilities
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Production
Line (Epitaxial growth)
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- LPE epitaxial growth equipment
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- Evaporator
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- Electron beam evaporator
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- Plasma
Chemical Vapour Deposition equipment
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Radio frequency source
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Thermal treatment furnace
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Assembly
Line (Chip process, resin molding)
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Fully automatic die bonder
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Fully automatic wire bonder
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Manual wire bonder
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Automatic epoxy dispenser
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Ovens
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Evaluation
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Photoluminescence
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Ellipsometer
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Surface step measuring machine
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Carrier concentration profiler
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Curve tracer
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Automatic wafer probing machine
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Quality
Control
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Optical spectrum analyzer
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Metal microscope
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Microscope
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High speed digitizing oscilloscope
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Pulse/Function generator
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Curve tracer
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LED Chip sorter
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LED Lamp sorter
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Powermeter (with integrating sphere)
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Photometer (brightness measurement)
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Utilities
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RO method-ultra pure water supplier
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Oil-free rotary compressor
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Hydrogen gas purifier
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- Nitrogen
gas purifier
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Quality assurance
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LED
Epi-wafer
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- 10 points in every epi-batch are sampled and measured for wavelength and radiant intensity
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- Film
thickness of each layer is controlled
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- Carrier concentration measured
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LED
die
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10 points in each wafer are sampled and measured for Vf,
Po (mW), Ie (mW/sr), Iv (mA), tr/tf (nsec), and Vfp-Ifp
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LED lamp
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All LED lamps in lead frame are checked on Vf, Ir,
Thyrister, and appearance
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Each LED lamp is sorted into radiant intensity (mW)
levels which are confirmed with regard to Vf, Po(mW), Ie(mW/sr) or I (mcd),
lambda p, delta lambda, tr/tf, and Vf-Ifp
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25 pieces are sampled and aged to check and confirm changing in
chip process and assembling process under DC (If=50mA) at 80°C
for being fed-back for each area
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