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L910-xxAU
Infrared LED Lamp
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This
series of L910-xxAU is a GaAlAs LED mounted on a lead frame and
encapsulated in various types of epoxy lens which offer
different design settings. On forward bias it emits a high power
radiation of typical 10mW with a peak wavelength of 910nm.
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Product
Specification
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Chip
Material |
GaAlAs
(DDH) |
Peak
Wavelength |
910nm
typ. |
Package |
Clear
epoxy resin |
Lead
Frame |
Soldered |
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Maximum
Specification
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Item |
Max
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Ambient
Temp.
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Power
dissipation, PD |
160
mW
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Ta=25°C |
Forward
current
, IF |
100
mA |
Ta=25°C |
Pulse Forward
current IFP |
500
mA |
Ta=25°C |
Reverse
voltage, VR |
5
V |
Ta=25°C |
Operation
temp., Topr |
-30/+85 °C
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Storage
temp.
, Tstg
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-30/+90
°C
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Solder
temp.,
Tsol
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260 °C
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Electro-Optical
Characteristics
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Item |
Condition |
Min |
Standard |
Max |
Forward
voltage, VF |
IF
=50mA |
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1.4
V |
1.7
V |
Reverse
current
, IR |
VR
=5V
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10
µA
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Total
radiated power, PO |
IF
=50mA |
5
mW |
10
mW
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Peak
wavelength,
lp |
IF
=50mA |
900
nm |
910
nm |
930
nm |
Half-Width,
l ½
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IF
=50mA |
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60
nm |
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Rise-time
tR |
IF
=50mA |
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1.5
µsec |
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Fall-time
tF |
IF
=50mA |
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0.8
µsec |
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Radiant
Intensity Characteristics |
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Part
no. |
Viewing
Half Angle |
Radiance
(IF=50mA)
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Dimension |
L910-01AU
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±10° |
35
mW/sr |
Ø5
mm Fig. no.1 |
L910-03AU |
±15° |
25
mW/sr |
Ø5
mm Fig. no.2 |
L910-04AU
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±20° |
20
mW/sr |
Ø5
mm Fig. no.3 |
L910-06AU |
±6° |
55
mW/sr |
Ø5
mm Fig. no.4 |
L910-09U
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±25°
(long axis) |
25
mW/sr |
Ø5
mm
(oval)
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±15°
(short axis) |
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Fig.
no.5 |
L910-33AU
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±15° |
20
mW/sr |
Ø3
mm Fig. no.7 |
L910-36AU |
±30°
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25
mW/sr |
Ø3
mm Fig. no.8 |
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