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L910-xxAU      Infrared LED Lamp
  
This series of L910-xxAU is a GaAlAs LED mounted on a lead frame and encapsulated in various types of epoxy lens which offer different design settings. On forward bias it emits a high power radiation of typical 10mW with a peak wavelength of 910nm.
 
Product Specification
 
Chip Material GaAlAs (DDH)
Peak Wavelength 910nm typ.
Package Clear epoxy resin
Lead Frame Soldered
 
Maximum Specification
 
Item Max   Ambient Temp.
Power dissipation, PD   160 mW Ta=25C
Forward current , I 100 mA Ta=25C
Pulse Forward current IFP  500 mA Ta=25C
Reverse voltage, V 5 V Ta=25C
Operation temp., Topr  -30/+85 C
Storage temp. , Tstg   -30/+90 C
Solder temp., Tsol   260 C
 
Electro-Optical Characteristics  
 
Item Condition Min Standard Max
Forward voltage, VF IF =50mA 1.4 1.7 V
Reverse current , IR VR =5V   10 A  
Total radiated power, PO IF =50mA 5 mW 10 mW  
Peak wavelength, lp IF =50mA 900 nm  910 nm  930 nm 
Half-Width, l   IF =50mA 60 nm
Rise-time tR IF =50mA 1.5 sec
Fall-time tF IF =50mA 0.8 sec
 
Radiant Intensity Characteristics
 
Part no. Viewing Half Angle Radiance  (IF=50mA)   Dimension 
L910-01AU   10  35 mW/sr 5 mm Fig. no.1
L910-03AU 15  25 mW/sr 5 mm Fig. no.2
L910-04AU   20  20 mW/sr  5 mm Fig. no.3
L910-06AU 6  55 mW/sr 5 mm Fig. no.4
L910-09U   25 (long axis)  25 mW/sr  

5 mm (oval)  

15 (short axis) Fig. no.5
L910-33AU   15  20 mW/sr  3 mm Fig. no.7
L910-36AU 30    25 mW/sr 3 mm Fig. no.8
 
  
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