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LN850-xxUS
Infrared LED Lamp
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This
series of LN850-xxUS is a GaAlAs LED mounted on a lead frame and
encapsulated in various types of epoxy lens which offer
different design settings. On forward bias it emits a high power
radiation of typical 18mW with a peak wavelength of 850nm.
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Product
Specification
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| Chip
Material |
GaAlAs
(DDH) |
| Peak
Wavelength |
850nm
typ. |
| Package |
Clear
epoxy resin |
| Lead
Frame |
Soldered |
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Maximum
Specification
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| Item |
Max
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Ambient
Temp.
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| Power
dissipation, PD |
150
mW
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Ta=25°C |
| Forward
current
, IF |
100
mA |
Ta=25°C |
| Pulse Forward
current IFP |
1
A |
Ta=25°C |
| Reverse
voltage, VR |
5
V |
Ta=25°C |
| Operation
temp., Topr |
-30/+85 °C
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| Storage
temp.
, Tstg
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-30/+100
°C
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| Solder
temp.,
Tsol
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260 °C
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| Electro-Optical
Characteristics
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| Item |
Condition |
Min |
Standard |
Max |
| Forward
voltage, VF |
IF
=50mA |
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1.45
V |
1.7
V |
| Reverse
current
, IR |
VR
=5V
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10
µA
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| Total
radiated power, PO |
IF
=50mA |
15
mW |
18
mW
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| Peak
wavelength,
lp |
IF
=50mA |
835
nm |
850
nm |
865
nm |
| Half-Width,
l ½
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IF
=50mA |
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35
nm |
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| Rise-time
tR |
IF
=50mA |
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15
nsec |
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| Fall-time
tF |
IF
=50mA |
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10
nsec |
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| Radiant
Intensity Characteristics |
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| Part
no. |
Viewing
Half Angle |
Radiance
(IF=50mA)
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Dimension |
| LN850-01US
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±10° |
75
mW/sr |
Ø5
mm Fig. no.1 |
| LN850-02US
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±6° |
110
mW/sr |
Ø5
mm Fig. no.2 |
| LN850-03US |
±15° |
70
mW/sr |
Ø5
mm Fig. no.3 |
| LN850-04US
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±20° |
40
mW/sr |
Ø5
mm Fig. no.4 |
| LN850-05US
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±40° |
12
mW/sr |
Ø5
mm Fig. no.5 |
| LN850-06US |
±7° |
120
mW/sr |
Ø5
mm Fig. no.6 |
| LN850-09US
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±25°
(long axis) |
45
mW/sr |
Ø5
mm Fig. no.7
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±15°
(short axis) |
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(oval) |
| LN850-33US
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±15° |
35
mW/sr |
Ø3
mm Fig. no.9 |
| LN850-36US |
±30°
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20
mW/sr |
Ø3
mm Fig. no.10 |
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