LN850-xxUS      Infrared LED Lamp
This series of LN850-xxUS is a GaAlAs LED mounted on a lead frame and encapsulated in various types of epoxy lens which offer different design settings. On forward bias it emits a high power radiation of typical 18mW with a peak wavelength of 850nm.
Product Specification
Chip Material GaAlAs (DDH)
Peak Wavelength 850nm typ.
Package Clear epoxy resin
Lead Frame Soldered
Maximum Specification
Item Max   Ambient Temp.
Power dissipation, PD   150 mW Ta=25C
Forward current , I 100 mA Ta=25C
Pulse Forward current IFP  1 A Ta=25C
Reverse voltage, V 5 V Ta=25C
Operation temp., Topr  -30/+85 C
Storage temp. , Tstg   -30/+100 C
Solder temp., Tsol   260 C
Electro-Optical Characteristics  
Item Condition Min Standard Max
Forward voltage, VF IF =50mA 1.45 1.7 V
Reverse current , IR VR =5V   10 A  
Total radiated power, PO IF =50mA 15 mW 18 mW  
Peak wavelength, lp IF =50mA 835 nm  850 nm  865 nm 
Half-Width, l   IF =50mA 35 nm
Rise-time tR IF =50mA 15 nsec
Fall-time tF IF =50mA 10 nsec
Radiant Intensity Characteristics
Part no. Viewing 
Half Angle
LN850-01US   10  75 mW/sr 5 mm Fig. no.1
LN850-02US   6 110 mW/sr 5 mm Fig. no.2
LN850-03US 15  70 mW/sr 5 mm Fig. no.3
LN850-04US   20  40 mW/sr  5 mm Fig. no.4
LN850-05US   40  12 mW/sr 5 mm Fig. no.5
LN850-06US 7 120 mW/sr 5 mm Fig. no.6
LN850-09US   25 (long axis)  45 mW/sr  

5 mm Fig. no.7  

15 (short axis) (oval)
LN850-33US   15  35 mW/sr  3 mm Fig. no.9
LN850-36US 30    20 mW/sr 3 mm Fig. no.10
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