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L750-xxAU      Infrared LED Lamp
  
This series of L760-xxAU is a GaAlAs LED mounted on a lead frame and encapsulated in various types of epoxy lens which offer different design settings. On forward bias it emits a high power radiation of typical 20mW with a peak wavelength of 750nm.
 
Product Specification
 
Chip Material GaAlAs (DDH)
Peak Wavelength 750nm typ.
Package Clear epoxy resin
Lead Frame Soldered
 
Maximum Specification
 
Item Max   Ambient Temp.
Power dissipation, PD   220 mW Ta=25C
Forward current , I 75 mA Ta=25C
Pulse Forward current IFP  500 mA Ta=25C
Reverse voltage, V 5 V Ta=25C
Operation temp., Topr  -30/+85 C
Storage temp. , Tstg   -30/+100 C
Solder temp., Tsol   260 C
 
Electro-Optical Characteristics  
 
Item Condition Min Standard Max
Forward voltage, VF IF =50mA 1.80 V  2.2 V
Reverse current , IR VR =5V   10 A  
Total radiated power, PO IF =50mA   20 mW  
Peak wavelength, lp IF =50mA 725 nm  750 nm  775 nm 
Half-Width, l   IF =50mA 25 nm
Rise-time tR IF =50mA 80 nsec
Fall-time tF IF =50mA 80 nsec
 
Radiant Intensity Characteristics
 
Part no. Viewing Half Angle Radiance  (IF=50mA)   Dimension 
L750-01AU   10   90 mW/sr 5 mm Fig. no.1
L750-03AU 15   70 mW/sr 5 mm Fig. no.3
L750-04AU   20   60 mW/sr  5 mm Fig. no.4
L750-06AU 6 120 mW/sr 5 mm Fig. no.6
L750-09AU   25 (short axes)   70 mW/sr  5 mm Fig. no.7
15 (long axes)
L750-33AU   15   50 mW/sr  3 mm Fig. no.9
L750-36AU 30     35 mW/sr 3 mm Fig. no.10
 
  
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