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LN850-40xxx
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LN850-40xxx
Metal
Stem High Reliability and High Power IR LED Lamp
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The
series of LN850-40
is a GaAlAs LED mounted on a metal stem and covered with
epoxy resin
or hermetically sealed with Φ5
glass-lens can.
On
forward bias, it emits a high power radiation which peaks at
850nm.
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Product
Specification
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| Chip
Material |
AlGaAs/AlGaAs |
| Peak
Wavelength |
850nm
typ. |
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| Package,
Lens and Outer Dimension |
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Part
No.
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Stem
Type
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Stem
polarity
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Lens
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Dimension
Fig
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LN850-40K00
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TO-46
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anode
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epoxy
resin
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1
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LN850-40K32
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TO-46
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anode
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spherical
glass
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2
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LN850-40K42
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TO-46
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anode
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aspheric
glass
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3
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LN850-40M00
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TO-18
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anode
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epoxy
resin
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4
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LN850-40M32
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TO-18
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anode
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spherical
glass
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5
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LN850-40T00
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TO-18
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anode
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epoxy
resin
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6
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LN850-40T32
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TO-18
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anode
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spherical
glass
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7
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LN850-40T52
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TO-18
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anode
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flat
glass Φ3
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8
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Maximum
Specification
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| Item |
Max
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Ambient
Temp.
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| Power
dissipation, PD |
160
mW
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Ta=25°C |
| Forward
current
, IF |
100
mA |
Ta=25°C |
| Pulse Forward
current IFP |
1
A |
Ta=25°C |
| Reverse
voltage, VR |
5
V |
Ta=25°C |
| Operation
temp., Topr |
-30/+80 °C
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| Storage
temp.
, Tstg
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-30/+100
°C
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| Solder
temp.,
Tsol
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260 °C
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| *
Pulse Forward Current condition: duty=1% and Tw=1µs |
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| Electro-Optical
Characteristics
(Ta=25°C)
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| Item |
Condition |
Min |
Standard |
Max |
| Forward
voltage, VF |
IF
=50mA |
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1.55
V |
1.70
V |
| Reverse
current
, IR |
VR
=5V
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10
µA
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| Peak
wavelength,
lp |
IF
=50mA |
835
nm |
850
nm |
865
nm |
| Half-Width,
l ½
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IF
=50mA |
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35
nm |
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| Rise-time
tR |
IF
=50mA |
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30
nsec |
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| Fall-time
tF |
IF
=50mA |
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25
nsec |
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| Total
Radiated Power and Radiant
Intensity at
IF=50mA
(Ta=25°C) |
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| Part
no. |
Total
PO |
Radiant |
Viewing
Half Angle |
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Min |
Typ |
intensity |
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LN850-40K00
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12 mW |
20
mW |
3
mW/sr |
±40° |
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LN850-40K32
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9 mW |
15
mW |
60
mW/sr |
±10° |
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LN850-40K42
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8 mW |
13
mW |
80
mW/sr |
±6° |
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LN850-40M00
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13 mW |
22
mW |
12
mW/sr |
±40° |
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LN850-40M32
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11 mW |
18
mW |
75
mW/sr |
±10° |
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LN850-40T00
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13 mW |
22
mW |
8 mW/sr |
±60° |
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LN850-40T32
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9 mW |
15 mW |
65
mW/sr |
±15° |
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LN850-40T52
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5 mW |
8
mW |
5 mW/sr |
±55° |
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