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LN850-40xxx      Metal Stem High Reliability and High Power IR LED Lamp
  

The series of LN850-40 is a GaAlAs LED mounted on a metal stem and covered with epoxy resin or hermetically sealed with Φ5 glass-lens can. On forward bias, it emits a high power radiation which peaks at 850nm.

 
Product Specification
 
Chip Material AlGaAs/AlGaAs
Peak Wavelength 850nm typ.
 
Package, Lens and Outer Dimension   
 
Part No. Stem Type Stem polarity Lens Dimension Fig
LN850-40K00 TO-46 anode epoxy resin 1
LN850-40K32 TO-46 anode spherical glass 2
LN850-40K42 TO-46 anode aspheric glass 3
LN850-40M00 TO-18 anode epoxy resin 4
LN850-40M32 TO-18 anode spherical glass 5
LN850-40T00 TO-18 anode epoxy resin 6
LN850-40T32 TO-18 anode spherical glass 7
LN850-40T52 TO-18 anode flat glass Φ3 8
 
Maximum Specification
 
Item Max   Ambient Temp.
Power dissipation, PD   160 mW Ta=25C
Forward current , I 100 mA Ta=25C
Pulse Forward current IFP  1 A Ta=25C
Reverse voltage, V 5 V Ta=25C
Operation temp., Topr  -30/+80 C
Storage temp. , Tstg   -30/+100 C
Solder temp., Tsol   260 C
 
 * Pulse Forward Current condition: duty=1% and Tw=1s
 
Electro-Optical Characteristics (Ta=25C)
 
Item Condition Min Standard Max
Forward voltage, VF IF =50mA 1.55 V  1.70 V
Reverse current , IR VR =5V   10 A  
Peak wavelength, lp IF =50mA 835 nm  850 nm  865 nm 
Half-Width, l   IF =50mA 35 nm
Rise-time tR IF =50mA 30 nsec
Fall-time tF IF =50mA 25 nsec
 
Total Radiated Power and Radiant Intensity at IF=50mA (Ta=25C)
 Part no.

 Total P 

Radiant  Viewing Half Angle
Min Typ intensity
LN850-40K00 12 mW 20 mW    3 mW/sr 40
LN850-40K32   9 mW 15 mW  60 mW/sr 10
LN850-40K42   8 mW 13 mW  80 mW/sr 6
LN850-40M00 13 mW 22 mW  12 mW/sr  40
LN850-40M32 11 mW 18 mW  75 mW/sr 10
LN850-40T00 13 mW 22 mW    8 mW/sr   60
LN850-40T32   9 mW 15 mW  65 mW/sr  15
LN850-40T52   5 mW   8 mW    5 mW/sr  55
   
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