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L850-PD010-D51 Metal
Can Sealed PD-monitoring High Power IR LED
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L850-PD010-D51 is a GaAlAs LED
and Si-PD mounted on TO-18 stem hermetically sealed with a
glass-flat can and is designed to monitor light through detector
for controlling its own output power.
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Product
Specification
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| Chip
Material |
GaAlAs
(DDH); Si (PIN) |
| Peak
Wavelength |
850nm
typ. |
| Package |
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Type |
TO-18
stem |
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Lens |
Flat
glass |
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Can |
Ni
plated |
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Maximum
Specification
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| Item |
Max
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Ambient
Temp.
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| Power
dissipation, PD |
160
mW
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Ta=25°C |
| Forward
current
, IF |
100
mA |
Ta=25°C |
| Pulse Forward
current IFP |
1
A |
Ta=25°C |
| Reverse
voltage, VR |
5
V |
Ta=25°C |
| PD
- Reverse Voltage VR |
100 V |
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| Operation
temp., Topr |
-30/+85 °C
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| Storage
temp.
, Tstg
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-30/+100
°C
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| Solder
temp.,
Tsol
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260 °C
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| Electro-Optical
Characteristics
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| Item |
Condition |
Min |
Standard |
Max |
| Forward
voltage, VF |
IF
=50mA |
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1.5
V |
1.7
V |
| Reverse
current
, IR |
VR
=5V
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10
µA
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| Total
radiated power, PO |
IF
=50mA |
3.0
mW
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6.0
mW
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| Radiant
Intensity, IE |
IF
=50mA |
2.5
nW/sr |
5.0
mW/sr |
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| Peak
wavelength,
lp |
IF
=50mA |
830
nm |
850
nm |
870nm |
| Half-Width,
l ½
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IF
=50mA |
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35
nm |
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| Viewing
Half-Angle |
IF
=50mA |
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±55
deg. |
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| Rise-time
tR |
IF
=50mA |
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60
nsec |
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| Fall-time
tF |
IF
=50mA |
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40
nsec |
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| PD
- Output current, IL |
VR
=0V
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130
µA |
270
µA |
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| PD
- Dark current, ID |
VR
=10V
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10
nA |
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