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L810-xxAU      Infrared LED Lamp
  
This series of L810-xxAU is a GaAlAs LED mounted on a lead frame and encapsulated in various types of epoxy lens which offer different design settings. On forward bias it emits a high power radiation with a peak wavelength of 810nm.
 
Product Specification
 
Chip Material GaAlAs (DDH)
Peak Wavelength 810nm typ.
Package Clear epoxy resin
Lead Frame Soldered
 
Maximum Specification
 
Item Max   Ambient Temp.
Power dissipation, PD   170 mW Ta=25C
Forward current , I 100 mA Ta=25C
Pulse Forward current IFP  500 mA Ta=25C
Reverse voltage, V 5 V Ta=25C
Operation temp., Topr  -30/+85 C
Storage temp. , Tstg   -30/+100 C
Solder temp., Tsol   260 C
 
Electro-Optical Characteristics (Ta=25C)
 
Item Condition Min Standard Max
Forward voltage, VF IF =50mA 1.6 1.8 V
Reverse current , IR VR =5V   10 A  
Total radiated power, PO IF =50mA 16 mW   18 mW  
Peak wavelength, lp IF =50mA 795 nm  810 nm  825 nm 
Half-Width, l   IF =50mA 35 nm
Rise-time tR IF =50mA 60 nsec
Fall-time tF IF =50mA 40 nsec
 
Radiant Intensity Characteristics (Ta=25C)
 
Part no. Viewing Half Angle Radiance  (IF=50mA)   Dimension 
L810-01AU   10   90 mW/sr 5 mm Fig. no.1
L810-02AU 5 110 mW/sr 5 mm Fig. no.2
L810-03AU 15   80 mW/sr 5 mm Fig. no.3
L810-04AU   20   50 mW/sr  5 mm Fig. no.4
L810-05AU 40   12 mW/sr 5 mm Fig. no.5
L810-06AU 6 150 mW/sr 5 mm Fig. no.6
L810-09AU   25 (long axis)   60 mW/sr  

5 mm (oval)  

15 (short axis) Fig. no.7
L810-33AU   15   45 mW/sr  3 mm Fig. no.9
L810-36AU 30     25 mW/sr 3 mm Fig. no.10
 
  
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