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LN870-xxUP
Infrared LED Lamp
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This
series of LN870-xxUP is a GaAlAs LED mounted on a lead frame and
encapsulated in various types of epoxy lens which offer
different design settings. On forward bias it emits a high power
radiation of typical 22mW with a peak wavelength of 870nm.
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Product
Specification
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| Chip
Material |
GaAlAs
(DDH) |
| Peak
Wavelength |
870nm
typ. |
| Package |
Clear
epoxy resin |
| Lead
Frame |
Soldered |
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Maximum
Specification
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| Item |
Max
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Ambient
Temp.
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| Power
dissipation, PD |
160
mW
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Ta=25°C |
| Forward
current
, IF |
100
mA |
Ta=25°C |
| Pulse Forward
current IFP |
1
A |
Ta=25°C |
| Reverse
voltage, VR |
5
V |
Ta=25°C |
| Operation
temp., Topr |
-30/+85 °C
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| Storage
temp.
, Tstg
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-30/+100
°C
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| Solder
temp.,
Tsol
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260 °C
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| Electro-Optical
Characteristics
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| Item |
Condition |
Min |
Standard |
Max |
| Forward
voltage, VF |
IF
=50mA |
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1.5
V |
1.7
V |
| Reverse
current
, IR |
VR
=5V
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10
µA
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| Total
radiated power, PO |
IF
=50mA |
18
mW |
22
mW
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| Peak
wavelength,
lp |
IF
=50mA |
850
nm |
870
nm |
880
nm |
| Half-Width,
l ½
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IF
=50mA |
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35
nm |
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| Rise-time
tR |
IF
=50mA |
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30
nsec |
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| Fall-time
tF |
IF
=50mA |
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25
nsec |
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| Radiant
Intensity Characteristics |
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| Part
no. |
Viewing
Half Angle |
Radiance
(IF=50mA)
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Dimension |
| LN870-01UP
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±10° |
90
mW/sr |
Ø5
mm Fig. no.1 |
| LN870-02UP
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±6° |
130
mW/sr |
Ø5
mm Fig. no.2 |
| LN870-03UP |
±15° |
70
mW/sr |
Ø5
mm Fig. no.3 |
| LN870-04UP
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±20° |
50
mW/sr |
Ø5
mm Fig. no.4 |
| LN870-05UP |
±40° |
15
mW/sr |
Ø5
mm Fig. no.5 |
| LN870-06UP |
±7° |
150
mW/sr |
Ø5
mm Fig. no.6 |
| LN870-09UP
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±25°
(long axis) |
60
mW/sr |
Ø5
mm Fig. no.7
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±15°
(short axis) |
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(oval) |
| LN870-33UP
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±15° |
50
mW/sr |
Ø3
mm Fig. no.9 |
| LN870-36UP |
±30°
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30
mW/sr |
Ø3
mm Fig. no.10 |
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