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LN850-xxUP      Infrared LED Lamp
  
This series of LN850-xxUP is a GaAlAs LED mounted on a lead frame and encapsulated in various types of epoxy lens which offer different design settings. On forward bias it emits a high power radiation of typical 22mW with a peak wavelength of 850nm.
 
Product Specification
 
Chip Material GaAlAs (DDH)
Peak Wavelength 850nm typ.
Package Clear epoxy resin
Lead Frame Soldered
 
Maximum Specification
 
Item Max   Ambient Temp.
Power dissipation, PD   160 mW Ta=25C
Forward current , I 100 mA Ta=25C
Pulse Forward current IFP  1 A Ta=25C
Reverse voltage, V 5 V Ta=25C
Operation temp., Topr  -30/+85 C
Storage temp. , Tstg   -30/+100 C
Solder temp., Tsol   260 C
 
Electro-Optical Characteristics  
 
Item Condition Min Standard Max
Forward voltage, VF IF =50mA 1.5 1.7 V
Reverse current , IR VR =5V   10 A  
Total radiated power, PO IF =50mA 18 mW 22 mW  
Peak wavelength, lp IF =50mA 835 nm  850 nm  865 nm 
Half-Width, l   IF =50mA 35 nm
Rise-time tR IF =50mA 30 nsec
Fall-time tF IF =50mA 25 nsec
 
Radiant Intensity Characteristics
 
Part no. Viewing 
Half Angle
Radiance
(IF=50mA)  
Dimension 
LN850-01UP   10  90 mW/sr 5 mm Fig. no.1
LN850-02UP   6 130 mW/sr 5 mm Fig. no.2
LN850-03UP 15  70 mW/sr 5 mm Fig. no.3
LN850-04UP   20  50 mW/sr  5 mm Fig. no.4
LN850-05UP   40  15 mW/sr 5 mm Fig. no.5
LN850-06UP 7 150 mW/sr 5 mm Fig. no.6
LN850-09UP   25 (long axis)  60 mW/sr  

5 mm Fig. no.7  

15 (short axis) (oval)
LN850-33UP   15  50 mW/sr  3 mm Fig. no.9
LN850-36UP 30    30 mW/sr 3 mm Fig. no.10
 
  
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