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L940-xxV
High Efficiency Infrared LED
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This
series of L940-xxV is a AlGaAs LED mounted on a lead frame and
encapsulated in various types of epoxy lens which offer
different design settings. On forward bias it emits a high power
radiation of typical 20mW with a peak wavelength of 940nm.
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Product
Specification
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| Chip
Material |
AlGalAs/GaAs
(DDH) |
| Peak
Wavelength |
940nm
typ. |
| Package |
Clear
epoxy resin |
| Lead
Frame |
Soldered |
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Maximum
Specification
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| Item |
Max
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Ambient
Temp.
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| Power
dissipation, PD |
140
mW
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Ta=25°C |
| Forward
current
, IF |
100
mA |
Ta=25°C |
| Pulse Forward
current IFP |
1
A |
Ta=25°C |
| Reverse
voltage, VR |
5
V |
Ta=25°C |
| Operation
temp., Topr |
-30/+85 °C
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| Storage
temp.
, Tstg
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-30/+100
°C
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| Solder
temp.,
Tsol
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260 °C
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| Electro-Optical
Characteristics
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| Item |
Condition |
Min |
Standard |
Max |
| Forward
voltage, VF |
IF
=50mA |
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1.3
V |
1.45
V |
| Reverse
current
, IR |
VR
=5V
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10
µA
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| Total
radiated power, PO |
IF
=50mA |
16
mW
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20
mW
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| Peak
wavelength,
lp |
IF
=50mA |
930
nm |
940
nm |
955
nm |
| Half-Width,
l ½
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IF
=50mA |
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50
nm |
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| Rise-time
tR |
IF
=50mA |
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1
µsec |
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| Fall-time
tF |
IF
=50mA |
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0.5
µsec |
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| Radiant
Intensity Characteristics |
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| Part
no. |
Viewing
Half Angle |
Radiance
(IF=50mA)
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Dimension |
| L940-01V
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±10° |
65
mW/sr |
Ø5
mm Fig. no.1 |
| L940-03V |
±15° |
55
mW/sr |
Ø5
mm Fig. no.3 |
| L940-04V
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±20° |
25
mW/sr |
Ø5
mm Fig. no.4 |
| L940-06V |
±6° |
90
mW/sr |
Ø5
mm Fig. no.6 |
| L940-09V
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±25°
(long axis) |
40
mW/sr |
Ø5
mm
(oval)
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±15°
(short axis) |
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Fig.
no.7 |
| L940-33V
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±15° |
25
mW/sr |
Ø3
mm Fig. no.9 |
| L940-36V |
±30°
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13
mW/sr |
Ø3
mm Fig. no.10 |
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