L940-xxV      High Efficiency Infrared LED
This series of L940-xxV is a AlGaAs LED mounted on a lead frame and encapsulated in various types of epoxy lens which offer different design settings. On forward bias it emits a high power radiation of typical 20mW with a peak wavelength of 940nm.
Product Specification
Chip Material AlGalAs/GaAs (DDH)
Peak Wavelength 940nm typ.
Package Clear epoxy resin
Lead Frame Soldered
Maximum Specification
Item Max   Ambient Temp.
Power dissipation, PD   140 mW Ta=25C
Forward current , I 100 mA Ta=25C
Pulse Forward current IFP  1 A Ta=25C
Reverse voltage, V 5 V Ta=25C
Operation temp., Topr  -30/+85 C
Storage temp. , Tstg   -30/+100 C
Solder temp., Tsol   260 C
Electro-Optical Characteristics  
Item Condition Min Standard Max
Forward voltage, VF IF =50mA 1.3 1.45 V
Reverse current , IR VR =5V   10 A  
Total radiated power, PO IF =50mA 16 mW   20 mW  
Peak wavelength, lp IF =50mA 930 nm  940 nm  955 nm 
Half-Width, l   IF =50mA 50 nm
Rise-time tR IF =50mA 1 sec
Fall-time tF IF =50mA 0.5 sec
Radiant Intensity Characteristics
Part no. Viewing Half Angle Radiance  (IF=50mA)   Dimension 
L940-01V   10  65 mW/sr 5 mm Fig. no.1
L940-03V 15  55 mW/sr 5 mm Fig. no.3
L940-04V   20  25 mW/sr  5 mm Fig. no.4
L940-06V 6  90 mW/sr 5 mm Fig. no.6
L940-09V   25 (long axis)  40 mW/sr  

5 mm (oval)  

15 (short axis) Fig. no.7
L940-33V   15  25 mW/sr  3 mm Fig. no.9
L940-36V 30    13 mW/sr 3 mm Fig. no.10
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