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AR880-20
20-element Infrared LED
chip
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Product
Specification
Product |
20-element IR
LED array |
Part no. |
AR880-20 |
Chip
Material |
AlGaAs/GaAS |
Peak
Wavelength |
880nm
typ. |
Emitting
area |
320x420
µm as photomask |
Element
dimension |
381x508
µm as photomask |
Chip
dimension |
7620x508
µm as photomask |
No.
of elements |
20
elements/chip |
Pad
metal and dimension |
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-
front side (pad) |
cathode gold
127 µm
sq. as photomask |
- back
side (die) |
anode gold |
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Maximum
Specification
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Item |
Max
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Ambient
Temp.
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Power
dissipation per
segment, PD |
170
mW
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Ta=25°C |
Forward
current per
segment, IF |
125
mA |
Ta=25°C |
Reverse
voltage per segment, VR |
5
V |
Ta=25°C |
Operation
temp., Topr |
-30/+60 °C
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Storage
temp.
, Tstg
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-55/+90
°C
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Electro-Optical
Characteristics
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Item |
Condition |
Min |
Standard |
Max |
Forward
voltage per
segment, VF |
IF
=100mA |
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1.60
V |
1.80
V |
Reverse
current
, IR |
VR
=5V
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10
µA
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Leakage
current per
segment,
IL |
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10
µA |
Output
power per
segment, PO |
IF
=100mA |
5.0
mW |
8.0
mW
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Peak
wavelength,
lp |
IF
=100mA |
870
nm |
880
nm |
895
nm |
Half-Width,
l ½
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IF
=100mA |
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80
nm |
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*
output power of each LED is +/-30% of
array output average |
output
power of element is calibrated by
Photodine #500 |
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