SM850N      SMD type High Power IR LED
SM850N consists of GaAlAs LED mounted on the ceramics and sealed with silicon resin. It emits a spectral band of radiation peaking at 850nm.
Product Specification
Chip Material GaAlAs (DDH)
Peak Wavelength 850nm typ.
   Die Ceramics
   Resin Silicon
Maximum Specification
Item Max   Ambient Temp.
Power dissipation, PD   160 mW Ta=25C
Forward current , I 100 mA Ta=25C
Pulse Forward current IFP  500 mA Ta=25C
Reverse voltage, V 5 V Ta=25C
Operation temp., Topr  -20/+85 C
Storage temp. , Tstg   -20/+100 C
Solder temp., Tsol   240 C
Electro-Optical Characteristics  
Item Condition Min Standard Max
Forward voltage, VF IF =50mA 1.5 1.7 V
Reverse current , IR VR =5V   10 A  
Total radiated power, PO IF =50mA 5.0 mW 12 mW  
Radiant intensity, IE IF =50mA 2.5 mW/sr 6.0 mW/sr  
Peak wavelength, lp IF =50mA 840 nm  850 nm  860 nm 
Half-Width, l   IF =50mA 35 nm
Viewing Half-Angle  IF =50mA 55deg
Rise-time tR IF =50mA 30 nsec
Fall-time tF IF =50mA 25 nsec
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