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SM850N
SMD type High Power IR
LED
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SM850N
consists of GaAlAs LED mounted on the ceramics and sealed with
silicon resin. It emits a spectral band of radiation peaking at 850nm.
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Product
Specification
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| Chip
Material |
GaAlAs
(DDH) |
| Peak
Wavelength |
850nm
typ. |
| Package |
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Die |
Ceramics |
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Resin |
Silicon |
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Maximum
Specification
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| Item |
Max
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Ambient
Temp.
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| Power
dissipation, PD |
160
mW
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Ta=25°C |
| Forward
current
, IF |
100
mA |
Ta=25°C |
| Pulse Forward
current IFP |
500
mA |
Ta=25°C |
| Reverse
voltage, VR |
5
V |
Ta=25°C |
| Operation
temp., Topr |
-20/+85 °C
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| Storage
temp.
, Tstg
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-20/+100
°C
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| Solder
temp.,
Tsol
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240 °C
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| Electro-Optical
Characteristics
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| Item |
Condition |
Min |
Standard |
Max |
| Forward
voltage, VF |
IF
=50mA |
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1.5
V |
1.7
V |
| Reverse
current
, IR |
VR
=5V
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10
µA
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| Total
radiated power, PO |
IF
=50mA |
5.0
mW |
12
mW
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| Radiant
intensity, IE |
IF
=50mA |
2.5
mW/sr |
6.0
mW/sr
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| Peak
wavelength,
lp |
IF
=50mA |
840
nm |
850
nm |
860
nm |
| Half-Width,
l ½
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IF
=50mA |
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35
nm |
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| Viewing
Half-Angle |
IF
=50mA |
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±55deg |
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| Rise-time
tR |
IF
=50mA |
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30
nsec |
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| Fall-time
tF |
IF
=50mA |
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25
nsec |
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