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L660/805/975D
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L660/805/975D
multi-wavelength
LED
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This
device consists of GaAlAs LED 660nm and 805nm, and GaAs LED
975nm mounted on TO-18 stem with epoxy lens.
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Product
Specification
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| Chip
Material |
GaAlAs
and GaAs |
| Peak
Wavelength |
660,
805 and 975nm
typ. |
| Package |
Epoxy resin |
| Lead
Frame |
Soldered |
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Maximum
Specification
(Ta=25°C)
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| Item |
Max
Rated Value |
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660 |
805 |
975 |
| Power
dissipation, PD |
120
mW
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170
mW
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140
mW
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| Forward
current
, IF |
50
mA |
100
mA |
100
mA |
| Reverse
voltage, VR |
5
V |
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| Operation
temp., Topr |
-30/+85
°C
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| Storage
temp.
, Tstg
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-30/+100
°C
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| Solder
temp.,
Tsol
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260 °C
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| Electro-Optical
Characteristics |
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Cond |
Min |
Std |
Max |
| Item |
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| Forward
voltage, VF |
660nm |
IF
=20mA |
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1.90
V |
2.30
V |
| 805nm |
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1.40
V |
1.60
V |
| 975nm |
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1.20
V |
1.40
V |
| Reverse
current
, IR |
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VR
=5V
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10
µA |
| Total
radiated power, PO |
660nm |
IF
=20mA |
2.5
mW |
3.5
mW |
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| 805nm |
3.5
mW |
6.0
mW |
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| 975nm |
1.0
mW |
2.0
mW |
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| Peak
wavelength,
lp |
660nm |
IF
=20mA |
655
nm |
660
nm |
665
nm |
| 805nm |
795
nm |
805
nm |
815
nm |
| 975nm |
965
nm |
975
nm |
985
nm |
| Half-Width,
l ½
|
660nm |
IF
=20mA |
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20
nm |
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| 805nm |
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30
nm |
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| 975nm |
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55
nm |
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