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L660/805/975D      multi-wavelength LED
  
This device consists of GaAlAs LED 660nm and 805nm, and GaAs LED 975nm mounted on TO-18 stem with epoxy lens. 
 
Product Specification
 
Chip Material GaAlAs and GaAs
Peak Wavelength 660, 805 and 975nm typ.
Package Epoxy resin
Lead Frame Soldered
 
Maximum Specification (Ta=25C)
 
Item

Max  Rated Value

660 805 975
Power dissipation, PD   120 mW 170 mW 140 mW
Forward current , I 50 mA 100 mA 100 mA
Reverse voltage, V 5 V
Operation temp., Topr  -30/+85  C
Storage temp. , Tstg   -30/+100 C
Solder temp., Tsol   260 C
 
Electro-Optical Characteristics
Cond Min Std Max
Item
Forward voltage, VF 660nm IF =20mA 1.90 V 2.30 V
805nm 1.40 V 1.60 V
975nm 1.20 V 1.40 V
Reverse current , IR VR =5V   10 A
Total radiated power, PO 660nm IF =20mA 2.5 mW 3.5 mW
805nm 3.5 mW 6.0 mW
975nm 1.0 mW 2.0 mW
Peak wavelength, lp 660nm IF =20mA 655 nm 660 nm 665 nm
805nm 795 nm 805 nm 815 nm
975nm 965 nm 975 nm 985 nm
Half-Width, l   660nm IF =20mA 20 nm
805nm 30 nm
975nm 55 nm
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